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vishay siliconix dg451, dg452, dg453 document number: 74470 s09-2550-rev. e, 30-nov-09 www.vishay.com 1 high voltage 4- quad spst cmos analog switch features ? low on-resistance (4 typical) ? on-resistance flatness (0.2 typical) ? 100 ma continuous current ? 44 v supply maximum rating ? 15 v analog signal range ? fully specified at supply volt ages of 5 v, 12 v and 15 v ? ultra low power dissipation of (18 w) ? fast switching speed: - t on 80 ns - t off 60 ns ? ttl/cmos compatible ? esd protection 2 kv ? pin compatible with dg 411, dg412, and dg413 ? compliant to rohs directive 2002/95/ec applications ? audio and video signal switching ? precision automatic test equipment ? precision data acquisition ? relay replacement ? communications systems ? automotive and avionics applications ? sample and hold systems description the dg451 series has four independently selectable high voltage (44 v) spst switches, each with a typical on resistance of 4 and a typical flatness of 0.2 , ideal parameters for low distorti on audio signal switching. the dg451 (nc) and dg452 (no) are identical except for the digital logic control input, which is inverted as shown in the truth table. the dg453 has two normally closed and two normally open switches. these are high voltage switches that are fully specified with dual supplies at 5 v and 15 v and a single supply of 12 v and operating with ultra low power dissipation (18 w). fast switching speeds coupled with high signal bandwidth makes these parts suitable for video switching applications. all digital inputs have 0.8 v and 2.4 v logic thresholds ensuring low voltage tt l/cmos compatibility. each switch conducts equally well in both directions when on and can handle an input signal range that extends to the supply voltage rails. the dg451, dg452, and dg453 are pin compatible with the dg411, dg412, and dg413. functional block diagram and pin configuration truth table logic dg451 dg452 0onoff 1offon 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 top view in 1 in 2 d 1 d 2 s 1 s 2 v- v+ gnd v l s 4 s 3 d 4 d 3 in 4 in 3 tssop16 and soic16 dg451 truth table logic sw 1 , sw 4 sw 2 , sw 3 0 off on 1on off 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 to p v i ew in 1 in 2 d 1 d 2 s 1 s 2 v- v+ gnd v l s 4 s 3 d 4 d 3 in 4 in 3 tssop16 and soic16 dg453 rohs compliant
www.vishay.com 2 document number: 74470 s09-2550-rev. e, 30-nov-09 vishay siliconix dg451, dg452, dg453 notes: a. - 40 c to 85 c datasheet limits apply. notes: a. signals on s x , d x , or in x exceeding v+ or v- will be clamped by internal diodes . limit forward diode current to maximum current ratings. b. all leads welded or soldered to pc board. c. derate 5.6 mw/c above 70 c. d. derate 8.0 mw/c above 75 c. ordering information temp. range package part number dg451, dg452, dg453 - 40 c to 125 c a 16 pin tssop dg451eq-t1-e3 dg452eq-t1-e3 dg453eq-t1-e3 16 pin narrow soic DG451EY-T1-E3 dg452ey-t1-e3 dg453ey-t1-e3 absolute maximum ratings t a = 25 c, unless otherwise noted parameter limit unit v+ to v- 44 v gnd to v- 25 v l (gnd - 0.3) to (v+) + 0.3 digital inputs a , v s , v d (v-) - 2 to (v+) + 2 or 30 ma, whichever occurs first continuous current (d, s only) 100 ma peak current, s or d (pulsed 1 ms, 10 % duty cycle) 300 storage temperature - 65 to 150 c power dissipation (package) b 16 pin tssop c 450 mw 16 pin narrow soic d 600 thermal resistance (package) b 16 pin tssop 178 c/w 16 pin narrow soic 125 esd (hbm) 2kv specifications for dual supplies parameter symbol test conditions unless specified v+ = 15 v, v- = - 15 v v l = 5 v, v in = 2.4 v, 0.8 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full - 15 15 - 15 15 v on-resistance r on i s = - 10 ma, v d = - 10 v to + 10 v room full 3.8 5.3 8.3 5.3 7.3 on-resistance match r on i s = - 10 ma, v d = 10 v room full 0.12 0.5 1 0.5 0.5 on-resistance flatness r flatness i s = - 10 ma, v d = - 5 v, 0 v, + 5 v room full 0.25 0.5 0.5 0.5 0.5 switch off leakage current i s(off) v d = 10 v, v s = 10 v room full 0.1 - 0.5 - 20 0.5 20 - 0.5 - 2.5 0.5 2.5 na i d(off) room full 0.1 - 0.5 - 20 0.5 20 - 0.5 - 2.5 0.5 2.5 channel on leakage current i d(on) v s = v d = 10 v room full 0.1 - 0.4 - 40 0.4 40 - 1 - 5 1 5
document number: 74470 s09-2550-rev. e, 30-nov-09 www.vishay.com 3 vishay siliconix dg451, dg452, dg453 digital control input current, v in low i il v in under test = 0.8 v full 0.005 - 0.5 0.5 - 0.5 0.5 a input current, v in high i ih v in under test = 2.4 v full 0.005 - 0.5 0.5 - 0.5 0.5 input capacitance e c in f = 1 mhz room 7 pf dynamic characteristics tu r n - o n t i m e t on r l = 300 , c l = 35 pf v s = 10 v, see figure 2 room full 88 118 160 118 144 ns turn-off time t off room full 69 97 120 97 112 break-before-make time delay t d dg453 only, v s = 10 v r l = 300 , c l = 35 pf room 18 charge injection e q v g = 0 v, r g = 0 , c l = 1 nf room 22 pc off isolation e oirr r l = 50 , c l = 5 pf f = 1 mhz room - 60 db channel-to-channel crosstalk e x ta l k room - 85 source off capacitance e c s(off) f = 1 mhz room 31 pf drain off capacitance e c d(off) room 34 channel on capacitance e c d(on) room 103 total harmonic distortion e thd signal = 5 v rms , 20 hz to 20 khz, r l = 600 room 0.04 % power supplies power supply current i+ v+ = 16.5 v, v- = - 16.5 v v l = 5 v, v in = 0 or 5 v room full 0.001 0.5 5 0.5 5 a negative supply current i- room full - 0.001 - 0.5 - 5 - 0.5 - 5 logic supply current i l room full 0.001 0.5 5 0.5 5 ground current i gnd room full - 0.001 - 0.5 - 5 - 0.5 - 5 specifications for dual supplies parameter symbol test conditions unless specified v+ = 15 v, v- = - 15 v v l = 5 v, v in = 2.4 v, 0.8 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d specifications for dual supplies parameter symbol test conditions unless specified v+ = 5 v, v- = - 5 v v l = 5 v, v in = 2.4 v, 0.8 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full - 5 5 - 5 5 v on-resistance r on v+ = + 5 v, v- = - 5 v i s = - 10 ma, v d = - 3.5 v to + 3.5 v room full 3.8 11 15 11 12 on-resistance match r on v+ = + 5 v, v- = - 5 v, i s = - 10 ma, v d = 3.5 v room full 0.13 0.5 1 0.5 0.5 dynamic characteristics tu r n - o n t i m e e t on r l = 300 , c l = 35 pf v s = 3 v, see figure 2 room full 170 200 296 200 256 ns turn-off time e t off room full 66 96 124 96 113 break-before-make e time delay t d dg451 only, v s = 3 v r l = 300 , c l = 35 pf room full 98 charge injection e q v g = 0 v, r g = 0 , c l = 1 nf full 8 pc
www.vishay.com 4 document number: 74470 s09-2550-rev. e, 30-nov-09 vishay siliconix dg451, dg452, dg453 notes: a. v in = input voltage to perform proper function. b. room = 25 c, full = as determin ed by the operating temperature suffix. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this data sheet. e. guaranteed by design, not subject to production test. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. parameter symbol test conditions unless specified v+ = 5 v, v- = - 5 v v l = 5 v, v in = 2.4 v, 0.8 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d power supplies power supply current i+ v l = 5 v, v in = 0 or 5 v room full 0.001 - 0.5 - 5 - 0.5 - 5 a negative supply current i- room full - 0.001 - 0.5 - 5 - 0.5 - 5 logic supply current i l room full 0.001 - 0.5 - 5 - 0.5 - 5 ground current i gnd room full - 0.001 - 0.5 - 5 - 0.5 - 5 specifications for dual supplies specifications for unipolar supplies parameter symbol test conditions unless specified v+ = 12 v, v- = 0 v v l = 5 v, v in = 2.4 v, 0.8 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full 12 12 v on-resistance r on i s = - 10 ma, v d = 0 v to + 10 v room full 5.5 8.1 12.4 8.1 10.4 on-resistance match r on i s = - 10 ma, v d = + 10 v room full 0.14 0.5 1 0.5 0.5 on-resistance flatness r flatness i s = - 10 ma, v d = 0 v, + 5 v, + 10 v room full 0.94 1.5 1.7 1.5 1.5 dynamic characteristics tu r n - o n t i m e t on r l = 300 , c l = 35 pf v s = 8 v, see figure 2 room full 132 162 238 162 210 ns turn-off time t off room full 61 91 117 91 105 break-before-make time delay t d dg453 only, v s = 8 v r l = 300 , c l = 35 pf room 70 charge injection e q v g = 0 v, r g = 0 , c l = 1 nf room 1 pc power supplies power supply current i+ v l = 5 v, v in = 0 or 5 v room full 0.001 0.5 5 0.5 5 a negative supply current i- room full - 0.001 - 0.5 - 5 - 0.5 - 5 logic supply current i l room full 0.001 0.5 5 0.5 5 ground current i gnd room full - 0.001 - 0.5 - 5 - 0.5 - 5
document number: 74470 s09-2550-rev. e, 30-nov-09 www.vishay.com 5 vishay siliconix dg451, dg452, dg453 typical characteristics 25 c, v l = 5 v, unless otherwise noted on-resistance vs. v d and dual supply voltage on-resistance vs. v d and temperature leakage current vs. temperature 1 2 3 4 5 6 7 8 - 20 - 15 - 10 - 5 0 5 10 15 20 v com - analog voltage (v) r on - on-resistance ( ) 8 v t a = + 25 c i s = 10 ma 5.0 v 10 v 15 v 13.5 v 20 v 12 v v com - analog voltage (v) r on - on-resistance ( ) 0 1 2 3 4 5 6 7 8 9 10 - 15 - 10 - 5 0 5 10 15 + 125 c + 85 c + 25 c - 40 c v+ = + 15 v v- = - 15 v i s = 10 ma 1 10 100 1000 10 000 - 60 - 40 - 20 0 20 40 60 80 100 120 14 0 temperature (c) leakage current (pa) v+ = + 15 v v- = - 15 v i d (off) i d (on) i s (off) on-resistance vs. v d and single supply voltage on-resistance vs. v d and temperature leakage current vs. temperature 0 5 10 15 20 0 4 8 12162024283236 v com - analog voltage (v) r on - on-resistance ( ) t a = + 25 c i s = 10 ma v+ = 10.8 v v+ = 36 v v+ = 12 v v+ = 15 v v+ = 20 v v+ = 8 v v+ = 5 v v d - analog voltage (v) r on - on-resistance ( ) 2 3 4 5 6 7 8 9 10 11 12 024681012 + 125 c + 85 c + 25 c - 40 c v+ = + 12 v v- = 0 v i s = 10 ma 1 10 100 1000 10 000 100 000 - 60 - 40 - 20 0 20 40 60 80 100 120 140 temperature (c) leakage current (pa) v+ = + 13.2 v v- = 0 v i d (off) i d (on) i s (off)
www.vishay.com 6 document number: 74470 s09-2550-rev. e, 30-nov-09 vishay siliconix dg451, dg452, dg453 typical characteristics 25 c, v l = 5 v, unless otherwise noted charge injection vs. analog voltage switching time vs. dual supply voltage switching time vs. single supply voltage - 60 - 40 - 20 0 20 40 60 80 100 120 140 - 20 - 15 - 10 - 5 0 5 10 15 20 analog voltage (v) q - charge injection (pc) c l =1 nf drain v+ = + 15 v v- = - 15 v v+ = + 5 v v- = - 5 v v+ = + 12 v v- = - 0 v 20 40 60 80 100 120 140 160 180 200 4 6 8 101214161820 dual supply voltage (v) t on /t off (ns) t = 25 c t off t on 0 50 100 150 200 250 300 350 510152025303540 single supply voltage (v) t on /t off (ns) t = 25 c t off t on switching time vs. temperature and dual supply voltage switching time vs. temperature and single supply voltage switching threshold vs. supply voltage 25 50 75 100 125 150 175 200 225 250 275 - 55 - 35 - 15 5 25 45 65 85 105 125 temperature (c) t on /t off (ns) t on v = 15 v t off v = 5 v t off v = 15 v t on v = 5 v 0 50 100 150 200 250 300 350 - 55 - 35 - 15 5 25 45 65 85 105 125 temperature (c) t on /t off (ns) t on v = + 12 v t off v = + 12 v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 35 40 supply voltage (v) v t - switching threshold (v) with v l = 5 v
document number: 74470 s09-2550-rev. e, 30-nov-09 www.vishay.com 7 vishay siliconix dg451, dg452, dg453 typical characteristics 25 c, v l = 5 v, unless otherwise noted test circuits supply current vs. input switching frequency input switching frequency (hz) supply current (a) 10 100 1k 10k 100k 1m 10m 100 m 10 m 1 m 100 10 1 100 n 10 n 1 n dg45, dg452, dg453 v+ = + 15 v v- = - 15 v i gnd i+ i- i l insertion loss, off-isolation, crosstalk vs. frequency - 110 - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 frequency (hz) loss, oirr, x talk (db) oirr loss x talk 100k 1m 10m 100m 1g v+ = + 15 v v- = - 15 v r l = 50 figure 1. switching time 0 v logic inp u t s w itch inp u t* 3 v 50 % 0 v v s t r < 5 ns t f < 5 ns 90 % t off t o n v o n ote: logic inp u t w a v eform is in v erted for s w itches that ha v e the opposite logic sense control c l (incl u des fixt u re and stray capacitance) v + i n r l r l + r ds(on) v o = v s sd - 15 v v o g n d 10 v v l c l 35 pf v - r l 300 + 15 v + 5 v 90 % figure 2. break-before-make (dg453) 0 v logic inp u t s w itch s w itch o u tp u t 3 v 50 % 0 v o u tp u t 0 v 90 % v o2 v o1 90 % v s1 v s2 t d t d v o2 c l (incl u des fixt u re and stray capacitance) v + s 2 v - s 1 v l v s2 i n 2 d 2 v s1 r l2 300 d 1 v o1 c l2 35 pf - 15 v g n d + 5 v + 15 v r l1 300 c l1 35 pf i n 1
www.vishay.com 8 document number: 74470 s09-2550-rev. e, 30-nov-09 vishay siliconix dg451, dg452, dg453 test circuits vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74470 . figure 3. charge injection c l 1 nf d r g v o v + s v - 3 v i n v l v g - 15 v g n d + 15 v + 5 v off o n off off o n off v o v o i n x i n x q = v o x c l figure 4. crosstalk 0 v , 2.4 v s 1 x talk isolation = 20 log v o v s d 2 c = rf b ypass r l d 1 s 2 v s 0 v , 2.4 v i n 1 50 v o i n 2 r g = 50 v l v + - 15 v g n d v - n c c + 15 v c + 5 v c figure 5. off-isolation r l 50 d 0 v , 2.4 v v + r g = 50 -15 v g n d v - c v s off isolation = 20 log v o v s i n v l v o + 5 v c + 15 v s c c = rf bypass figure 6. source/drain capacitances d i n s v l v + -15 v g n d v - c 0 v , 2.4 v meter hp4192a impedance analyzer or e qu i v alent + 5 v c + 15 v c
all leads 0.101 mm 0.004 in e h c d e b a1 l 4 3 12 8 7 56 13 14 16 15 9 10 12 11 package information vishay siliconix document number: 71194 02-jul-01 www.vishay.com 1
jedec part number: ms-012 dim min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.38 0.51 0.015 0.020 c 0.18 0.23 0.007 0.009 d 9.80 10.00 0.385 0.393 e 3.80 4.00 0.149 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 l 0.50 0.93 0.020 0.037 0 8 0 8 ecn: s-03946?rev. f, 09-jul-01 dwg: 5300
vishay siliconix package information document number: 74417 23-oct-06 www.vishay.com 1 symbols dimensions in millimeters min nom max a - 1.10 1.20 a1 0.05 0.10 0.15 a2 - 1.00 1.05 b 0.22 0.28 0.38 c - 0.127 - d 4.90 5.00 5.10 e 6.10 6.40 6.70 e1 4.30 4.40 4.50 e-0.65- l 0.50 0.60 0.70 l1 0.90 1.00 1.10 y--0.10 1036 ecn: s-61920-rev. d, 23-oct-06 dwg: 5624 tssop: 16-lead
application note 826 vishay siliconix www.vishay.com document number: 72608 24 revision: 21-jan-08 application note recommended minimum pads for so-16 recommended minimum pads for so-16 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) 0.372 (9.449) return to index return to index
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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